sep.2000 tc measured point e1 e2 g2 g1 cm c1 e2 c2e1 label 4- f 6. 5 mounting holes 3-m6 nuts 108 29 +1.0 ?.5 62 18 7 18 7 18 8.5 22 4 93 0.25 48 0.25 2.8 4 7.5 6 (8.25) (18) 15 15.85 6 0.5 0.5 0.5 0.5 14 14 14 25 2.5 21.5 25 rtc rtc circuit diagram c2e1 e2 c1 g2 e2 e1 g1 CM200DU-24F application general purpose inverters & servo controls, etc mitsubishi igbt modules CM200DU-24F high power switching use i c ................................................................... 200a v ces ......................................................... 1200v insulated type 2-elements in a pack outline drawing & circuit diagram dimensions in mm
sep.2000 v ce = v ces , v ge = 0v v ge = v ces , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 200a, v ge = 15v v cc = 600v, i c = 200a v ge1 = v ge2 = 15v r g = 1.6 w , inductive load switching operation i e = 200a i e = 200a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to fin, thermal compoundapplied *2 (1/2 module) tc measured point is just under the chips i c = 20ma, v ce = 10v i c = 200a, v ge = 15v v ce = 10v v ge = 0v 1200 20 200 400 200 400 830 C40 ~ +150 C40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 mitsubishi igbt modules CM200DU-24F high power switching use v v w c c v n ? m n ? m g a a 1 40 2.4 78 3.4 2.0 300 80 500 300 200 3.2 0.15 0.18 0.091 * 3 16 ma m a nf nc m c v c/w w 1.8 1.9 2200 12.2 0.04 1.6 6v v ns 57 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c) q r g symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr , die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. * 1 : tc measured point is indicated in outline drawing. * 2 : typical value is measured by using shin-etsu silicone g-746. * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c main terminal to base plate, ac 1 min. main terminal m6 mounting holes m6 typical value symbol parameter collector current emitter current torque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit ty p. limits min. max. maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c) test conditions
sep.2000 mitsubishi igbt modules CM200DU-24F high power switching use performance curves v ge = 20v t j = 25 c 15 11 10 9.5 9 8.5 8 400 200 100 250 300 350 150 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 3 2.5 2 1.5 0.5 1 0 0 200 100 400 300 t j = 25 c t j = 125 c v ge = 15v 10 1 10 2 2 3 5 7 10 3 2 3 5 7 0.5 1 1.5 2 2.5 3 3.5 t j = 25 c 5 4 3 2 1 0 20 6 8 12 16 10 14 18 i c = 400a i c = 200a i c = 80a t j = 25 c 10 ? 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 v ge = 0v c ies c oes c res 10 1 10 2 57 10 3 23 57 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 0 conditions: v cc = 600v v ge = 15v r g = 1.6 w t j = 125 c inductive load 23 t d(off) t d(on) t f t r output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a)
sep.2000 mitsubishi igbt modules CM200DU-24F high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr 0 6 4 2 10 8 16 14 12 20 18 0 500 1500 2500 3000 1000 2000 v cc = 400v v cc = 600v i c = 200a 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t c = 25 c conditions: v cc = 600v v ge = 15v r g = 1.6 w t j = 25 c inductive load reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) ( c/w) tmie (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) igbt part: per unit base = r th(j c) = 0.15 c/ w fwdi part: per unit base = r th(j c) = 0.18 c/ w reverse recovery time t rr (ns) reverse recovery current l rr (a)
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